sot-323 plastic-encapsulate diode DAP202U switching diode features: z four types of packaging are available z high speed z suitable for high packing density layout z high reliability m marking:p maximum ratings @t a =25 parameter symbol limit unit peak reverse voltage v rm 80 v dc reverse voltage v r 80 v maximum (peak) forward current i fm 300 ma average forward current i o 100 ma power dissipation p d 200 mw junction temperature t j 150 storage temperature t stg -55 ~+ 150 electrical characteristics (ta=25 unless otherwise specified) parameter symbol test conditions m in m ax u nit reverse breakdown voltage v (br) i r = 100 a 80 v reverse voltage leakage current i r v r =70v 0.1 a forward voltage v f i f =100ma 1.2 v diode capacitance c d v r =6v, f=1mhz 3.5 pf reverse recovery time t rr v r =6v, i f =5ma 4 ns sot-323 1 2 3 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,jan,2014
0 25 50 75 100 125 150 0 50 100 150 200 250 0.2 0.4 0.6 0.8 1.0 0.1 1 10 100 020406080 1 10 100 1000 0 5 10 15 20 1.0 1.1 1.2 1.3 1.4 forward characteristics reverse characteristics power derating curve power dissipation p d (mw) ambient temperature t a ( ) pulsed DAP202U typical characteristics t a = 1 0 0 t a = 2 5 forward current i f (ma) forward voltage v f (v) t a =100 t a =25 reverse current i r (na) reverse voltage v r (v) pulsed t a =25 f=1mhz capacitance characteristics reverse voltage v r (v) capacitance between terminals c t (pf) 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,jan,2014
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